Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=2/a=024204/pdf
Reference24 articles.
1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
2. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
3. Reproducible switching effect in thin oxide films for memory applications
4. Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory
5. Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
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