Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer-Reference-Cited by-同舟云学术

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-kpassivation layer

Published:2017-09-13 Issue:10 Volume:56 Page:108003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawada Yuuki,Hanawa Hideyuki,Horio Kazushige

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=10/a=108003/pdf

Reference19 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN Power Transistors on Si Substrates for Switching Applications

3. Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

4. AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

5. Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

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3. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates;Membranes;2021-10-30

4. Simulation of the Effect of GaN Buffer Layer Doped with Iron Fe and Carbon C on the DC Static Characteristics of Normally Open HEMT AlGaN/AlN/GaN Transistor;2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus);2021-01-26

5. Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors;Silicon;2021-01-21