Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-020-00899-z.pdf
Reference44 articles.
1. Ikeda N, Niiyama Y, Kambayashi H, Sato Y, Nomura T, Kato S, Yoshida S (2010) GaN power transistors on Si substrates for switching applications. Proc IEEE 98:1151–1161
2. Moon JS, Wu S, Milosavljevic I, Conway A, Hashomoto P, Hu M, Antcliffe M, Micovicv M (2005) Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications. IEEE Electron Device Lett. 26:348–350
3. Palacios T, Charkraborty A, Rajan S, Poblenz C, Keller S, DenBaars SP, Speck JS, Mishra UK (2005) High-power AlGaN/GaN HEMTs for Ka-band applications. IEEE Electron Device Lett. 26:781–783
4. Chu KK, Chao PC, Pizzella MT, Actis R, Meharry DE, Nichols KB, Vaudo RP, Xu X, Flynn JS, Dion J, Brandes GR (2004) 9.4 W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates. IEEE Electron Device Lett. 25:596–598
5. Vetury R, Zhang N, Keller S, Mishra U (2001) The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans Electron Devices 48:560–566
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