Dynamics of interstitial atoms and vacancies during the crystallization of amorphous Si and Ge films by flash lamp annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=8/a=085505/pdf
Reference28 articles.
1. A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
2. Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
3. High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization
4. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique
5. Effect of Laser-Plasma X-Ray Irradiation on Crystallization of Amorphous Silicon Film by Excimer Laser Annealing
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1. Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam;Journal of Applied Physics;2023-05-12
2. Explosive crystallization of sputter-deposited amorphous germanium films by irradiation with an electron beam of SEM-level energies;Journal of Applied Physics;2021-06-01
3. Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films;Japanese Journal of Applied Physics;2020-07-01
4. Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors;Japanese Journal of Applied Physics;2019-05-31
5. The relation between amorphous structure and explosive crystallization of sputter-deposited amorphous germanium thin films;Japanese Journal of Applied Physics;2019-03-12
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