Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=10/a=101001/pdf
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1. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
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