Improved compact model for double-gate tunnel field-effect transistors by the rigorous consideration of gate fringing field
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=8/a=084301/pdf
Reference31 articles.
1. Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits
2. Near-threshold operation for power-efficient computing?
3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
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