Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers-Reference-Cited by-同舟云学术

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Electrical tuning of the oscillator strength in type II InAs/GaInSb quantum wells for active region of passively mode-locked interband cascade lasers

Published:2017-09-29 Issue:11 Volume:56 Page:110301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Dyksik Mateusz,Motyka Marcin,Kurka Marcin,Ryczko Krzysztof,Misiewicz Jan,Schade Anne,Kamp Martin,Höfling Sven,Sęk Grzegorz

Funder

Horizon 2020

Narodowe Centrum Nauki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=11/a=110301/pdf

Reference25 articles.

1. InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature

2. Interband cascade lasers with room temperature threshold current densities below 100 A/cm2

3. Compact CH4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

4. Compact TDLAS based optical sensor for ppb-level ethane detection by use of a 3.34 μm room-temperature CW interband cascade laser

5. Sensing of formaldehyde using a distributed feedback interband cascade laser emitting around 3493 nm

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1. Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications;Journal of Applied Physics;2024-08-01

2. Raman scattering of low energy HgCdTe phonons;Infrared Physics & Technology;2022-12

3. Interband cascade laser frequency combs;Journal of Physics: Photonics;2021-10-01

4. Fine tunability of optical gain characteristics of InGaAs/GaAsSb/InAlAs nano-heterostructure under combined effect of field and temperature;Superlattices and Microstructures;2021-08

5. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy;Materials;2020-07-12

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