Time-domain study on reproducibility of laser-based soft-error simulation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4S/a=04CD16/pdf
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1. SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design
2. Analysis of body-tie effects on SEU resistance of advanced FD-SOI SRAMs through mixed-mode 3-D Simulations
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4. K computer: 8.162 PetaFLOPS massively parallel scalar supercomputer built with over 548k cores
5. Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
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1. Spatial resolution of soft-error sensitive-depth analysis by scanning two-photon absorption laser microscopy;Japanese Journal of Applied Physics;2020-09-15
2. The Impact of Multiple-Cell Charge Generation on Multiple-Cell Upset in a 20-nm Bulk SRAM;IEEE Transactions on Nuclear Science;2018-08
3. Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets;IEEE Transactions on Nuclear Science;2018-01
4. Laser Visualization of the Development of Long Line-Type Mutli-Cell Upsets in Back-Biased SOI SRAMs;IEEE Transactions on Nuclear Science;2018-01
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