Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate-Reference-Cited by-同舟云学术

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Mg-compensation effect in GaN buffer layer for AlGaN/GaN high-electron-mobility transistors grown on 4H-SiC substrate

Published:2016-12-05 Issue:1 Volume:56 Page:015502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ko Kwangse,Lee Kyeongjae,So Byeongchan,Heo Cheon,Lee Kyungbae,Kwak Taemyung,Han Sang-Woo,Cha Ho-Young,Nam Okhyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=1/a=015502/pdf

Reference28 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN Power Transistors on Si Substrates for Switching Applications

3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

4. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz;physica status solidi (a);2023-06

2. Mg Doping of N-Polar, In-Rich InAlN;Materials;2023-03-10

3. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors;Micromachines;2020-05-20

4. Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer;Journal of Luminescence;2020-03

5. Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer;Japanese Journal of Applied Physics;2020-01-01

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