Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

Published:2017-02-16 Issue:3 Volume:56 Page:030308
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

He Shunyu,Xu Yu,Qi Lin,Li Zongyao,Cao Bing,Wang Chinhua,Zhang Jicai,Wang Jianfeng,Xu Ke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=3/a=030308/pdf

Reference27 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Mechanical Properties of Nanoporous GaN and Its Application for Separation and Transfer of GaN Thin Films

3. Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films

4. Van der Waals heterostructures

5. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

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1. Establishing Epitaxial Connectedness in Multi‐Stacking: The Survival of Thru‐Holes in Thru‐Hole Epitaxy;Advanced Engineering Materials;2023-12-08

2. Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence;Micron;2023-09

3. The essential difference between remote epitaxy and van der Waals epitaxy: Long-range orbital hybridization at the GaN/graphene/AlN interface;Journal of Crystal Growth;2023-05

4. Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence;Materials Science and Technology;2022-04-28

5. MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates;Nanomaterials;2022-02-25

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