Effect of energy-band bending induced by precipitation of ZrO2nanocrystals on memory characteristics of charge-trap flash memory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=9/a=094201/pdf
Reference27 articles.
1. Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2
2. NROM: A novel localized trapping, 2-bit nonvolatile memory cell
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4. In situ electron holography study of charge distribution in high-κ charge-trapping memory
5. Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications
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1. Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands*;Chinese Physics B;2020-04-01
2. Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer;Applied Physics Express;2019-06-21
3. Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory;Semiconductor Science and Technology;2018-10-25
4. Improved charge trapping characteristics of multilayered Zr x Si1− x O2 films with a bidirectional terraced bandgap structure;Applied Physics Express;2018-09-18
5. Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOzcharge trapping layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
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