Improved performances of Ge2Sb2Te5based phase change memory by W doping
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=5/a=050304/pdf
Reference24 articles.
1. Crystallization process of in situ annealed Ge2Sb2Te5 films
2. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
3. A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations
4. Phase Change Materials
5. Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials
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1. Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces;Journal of Physics: Condensed Matter;2024-09-13
2. Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film;Ceramics International;2023-12
3. Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed;Chinese Physics B;2023-09-01
4. Phase change memory materials and their applications;Russian Chemical Reviews;2022
5. Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping;Journal of Non-Crystalline Solids;2020-12
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