Resistive switching characteristics of Pt/CeOx/TiN memory device-Reference-Cited by-同舟云学术

Resistive switching characteristics of Pt/CeOx/TiN memory device

Published:2014-05-15 Issue:6 Volume:53 Page:060303
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ismail Muhammad,Talib Ijaz,Huang Chun-Yang,Hung Chung-Jung,Tsai Tsung-Ling,Jieng Jheng-Hong,Chand Umesh,Lin Chun-An,Ahmed Ejaz,Rana Anwar Manzoor,Nadeem Muhammad Younus,Tseng Tseung-Yuen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=6/a=060303/pdf

Reference21 articles.

1. Growth, dielectric properties, and memory device applications of ZrO2 thin films

2. Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films

3. The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

4. Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

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