The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device-Reference-Cited by-同舟云学术

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

Published:2010-05 Issue:5 Volume:50 Page:670-673
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Liu Kou-Chen,Tzeng Wen-Hsien,Chang Kow-Ming,Chan Yi-Chun,Kuo Chun-Chih,Cheng Chun-Wen

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications;Lee;IEEE Electron Dev Lett,2005

3. Effects of switching parameters on resistive switching behaviors of polycrystalline SrZrO3:Cr-based metal–oxide–metal structure;Park;IEEE Trans Electron Dev,2008

4. Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface;Sawa;Appl Phys Lett,2004

5. Effects of metal electrodes on the resistive memory switching property of NiO thin films;Lee;Appl Phys Lett,2008

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