Superior transport properties of InGaN channel heterostructure with high channel electron mobility
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=6/a=061003/pdf
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1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
3. Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors
4. Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures
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