Reducing operation voltages by introducing a low-kswitching layer in indium–tin-oxide-based resistance random access memory-Reference-Cited by-同舟云学术

Reducing operation voltages by introducing a low-kswitching layer in indium–tin-oxide-based resistance random access memory

Published:2016-05-23 Issue:6 Volume:9 Page:061501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Jin Fu-Yuan,Chang Kuan-Chang,Chang Ting-Chang,Tsai Tsung-Ming,Pan Chih-Hung,Lin Chih-Yang,Chen Po-Hsun,Chen Min-Chen,Huang Hui-Chun,Lo Ikai,Zheng Jin-Cheng,Sze Simon M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/9/i=6/a=061501/pdf

Reference24 articles.

1. Nanoionics-based resistive switching memories

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3. An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

4. Multilevel resistive switching memory with amorphous InGaZnO-based thin film

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