Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=10/a=104101/pdf
Reference30 articles.
1. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
2. Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-$\mu{\rm m}$ T-gate AlGaN/GaN HEMTs on Silicon by $({\rm NH}_{4})_{2}{\rm S}_{x}$ Treatment
3. AlGaN/GaN HEMTs on (111) silicon substrates
4. Trapping effects in GaN and SiC microwave FETs
5. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
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1. Thermal Admittance Spectroscopy of AlGaN/GaN HEMT Structure;Springer Proceedings in Physics;2024
2. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method;IEEE Transactions on Electron Devices;2022-09
3. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy;Semiconductor Science and Technology;2022-08-08
4. Trap-state mapping to model GaN transistors dynamic performance;Scientific Reports;2022-02-02
5. Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations;AIP Advances;2021-12-01
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