Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition-Reference-Cited by-同舟云学术

Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition

Published:2015-11-18 Issue:12 Volume:8 Page:125502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tanoue Hironobu,Taniguchi Takuya,Wada Shohei,Yamamoto Shinya,Nakamura Shohei,Naka Yoshihiro,Yoshikawa Hiroyuki,Munekata Mizue,Nagaoka Shoji,Nakamura Yusui

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=12/a=125502/pdf

Reference19 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

4. Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

5. Structural and optical properties of Zn(Mg,Cd)O alloy films grown by remote-plasma-enhanced MOCVD

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