Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=1S/a=01AE05/pdf
Reference26 articles.
1. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes
2. InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes
3. Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode
4. Effects of Ta Addition Through Co-Sputtering on the Electrical Characteristics of Indium Tin Oxide Thin Film Transistors
5. Electrical Properties and Reliability Analysis of Solution-Processed Indium Tin Zinc Oxide Thin Film Transistors with O2-Plasma Treatment
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