InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes
Author:
Funder
Korean Government
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Improved output power of InGaN-based ultraviolet LEDs using a heavily Si-doped GaN insertion layer technique;Chiu;IEEE J. Quantum Electron.,2012
2. AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes;Chae;Appl. Phys. Lett.,2012
3. Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells;Lu;Opt. Lett.,2012
4. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire;Hirayaa;Appl. Phys. Lett.,2007
5. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008
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1. The electrical conductivity of cubic (In1−x Ga x )2O3 films (x ≤ 0.18): native bulk point defects, Sn-doping, and the surface electron accumulation layer;Japanese Journal of Applied Physics;2022-03-16
2. Wet etching mechanism and crystallization of indium–tin oxide layer for application in light-emitting diodes;Japanese Journal of Applied Physics;2017-12-12
3. Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes;ACS Applied Materials & Interfaces;2017-12-08
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