Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory-Reference-Cited by-同舟云学术

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Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Published:2018-03-29 Issue:5S Volume:57 Page:05GC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Do-Kyung,Lee Gyu-Jeong,Lee Jae-Hyun,Kim Min-Hoi,Bae Jin-Hyuk

Funder

National Research Foundation of Korea

Ministry of Science ICT and Future Planning

Ministry of Education

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=5S/a=05GC03/pdf

Reference30 articles.

1. Printed Nonvolatile Memory for a Sheet-Type Communication System

2. Organic Nonvolatile Memory Devices Based on Ferroelectricity

3. Recent Advances in Organic Transistor Printing Processes

4. Morphology control strategies for solution-processed organic semiconductor thin films

5. Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors;Journal of Physics and Chemistry of Solids;2022-05

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