Resistive switching characteristics of interfacial phase-change memory at elevated temperature
Author:
Funder
Core Research for Evolutional Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FE06/pdf
Reference32 articles.
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4. 55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures
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2. Investigation on Synaptic Characteristics of Interfacial Phase Change Memory for Artificial Synapse Application;2020 International SoC Design Conference (ISOCC);2020-10-21
3. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications;Electronics;2020-08-07
4. Effects of electric and magnetic fields on the resistive switching operation of iPCM;Applied Physics Letters;2020-05-18
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