Suppression of Cu2− x S formation in Cu2ZnSnS4 by tin incorporation using molecular beam epitaxy system-Reference-Cited by-同舟云学术

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Suppression of Cu2− x S formation in Cu2ZnSnS4 by tin incorporation using molecular beam epitaxy system

Published:2018-06-12 Issue:8S3 Volume:57 Page:08RC03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nishida Genki,Murayama Masanari,Takeuchi Akiko,Shimamune Yosuke,Jimbo Kazuo,Katagiri Hironori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S3/a=08RC03/pdf

Reference31 articles.

1. Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films

2. Optical and Electrical Properties of Cu2ZnSnS4 Film Prepared by Sulfurization Method

3. Effect of intrinsic strain on the optical band gap of single phase nanostructured Cu 2 ZnSnS 4

4. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

5. Cu2ZnSnS4photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen doped single layer graphene for CZTS-based thin film solar cells;Optical Materials;2024-04

2. Influence of boric acid concentration on the properties of electrodeposited CZTS absorber layers;Physica Scripta;2020-02-24

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