Cu2ZnSnS4photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition-Reference-Cited by-同舟云学术

Cu2ZnSnS4photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition

Published:2016-10-16 Issue:1 Volume:25 Page:14-22
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Tajima Shin¹,Umehara Mitsutaro¹,Hasegawa Masaki¹,Mise Takahiro¹^ORCID,Itoh Tadayoshi¹

Affiliation:

1. Toyota Central R&D Labs., Inc.; 41-1 Yokomichi Nagakute Aichi 480-1192 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2837/fullpdf

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3. Enhanced conversion efficiencies of CZTS-based thin film solar cells;Katagiri;Applied Physics Express,2008

4. Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation;Shin;Thin Solid Films,2014

5. H. Sugimoto C. Liao H. Hiroi N. Sakai T. Kato Proc. PVSC 39 2013

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