Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity-Reference-Cited by-同舟云学术

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Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

Published:2018-03-08 Issue:4S Volume:57 Page:04FB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizuno Tomohisa,Omata Yuhsuke,Kanazawa Rikito,Iguchi Yusuke,Nakada Shinji,Aoki Takashi,Sasaki Tomokazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FB03/pdf

Reference27 articles.

1. Electro-Luminescence from Ultra-Thin Silicon

2. Observation of optical gain in ultra-thin silicon resonant cavity light-emitting diode

3. Broad and Flat Brillouin Gain Spectrum in Optical Fiber Obtained by Modulating Driving Current of Laser Diode

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1. Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer;Journal of Applied Physics;2023-04-13

2. Si surface orientation dependence of SiC-dot formation in bulk-Si using hot-C⁺-ion implantation technique;Journal of Applied Physics;2022-02-21

3. Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers;Japanese Journal of Applied Physics;2022-02-09

4. Blister suppression in the CO+ molecule implanted SOI substrates with ultrathin buried oxides;Materials Today Communications;2021-09

5. Thermally Robust High‐Resistance Layers on Low‐Resistance Silicon Synthesized by Molecular CO + Ion Implantation;physica status solidi (a);2021-05-03

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