Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage-Reference-Cited by-同舟云学术

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Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage

Published:2018-02-14 Issue:4S Volume:57 Page:04FE01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsui Chihiro^ORCID,Kinoshita Reika,Takeuchi Ken

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FE01/pdf

Reference35 articles.

1. 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

2. Highly-reliable TaOx reram technology using automatic forming circuit

3. A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-volatile memory system design of edge server and cloud centralized server for multiple-tier 5G network;Japanese Journal of Applied Physics;2021-03-16

2. 3-D NAND Flash Value-Aware SSD: Error-Tolerant SSD Without ECCs for Image Recognition;IEEE Journal of Solid-State Circuits;2019-06

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