N-type silicon solar cell with rear tunnel oxide combined with rear screen-printed electrodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8S3/a=08RB16/pdf
Reference26 articles.
1. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
2. Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept—A Review
3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
4. Field-effect passivation by charge injection into SiNx using a novel low-cost plasma charging method
5. Investigation of Rear Localized Back Surface Field Formed from Boron Laser Doping and Screen-printed Aluminum Paste in High-Efficiency Solar Cells
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