Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
Author:
Funder
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6S3/a=06KC03/pdf
Reference31 articles.
1. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors
2. Performance comparison of a GaN GIT and a Si IGBT for high-speed drive applications
3. GaN on silicon E-HEMT and pure silicon MOSFET in high frequency switching of EV DC/DC converter: A comparative study in a nissan leaf
4. SiC-MOSFET composite boost converter with 22 kW/L power density for electric vehicle application
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