Acceleration of metal-atom diffusion in electric field at metal/insulator interfaces: First-principles study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FB05/pdf
Reference34 articles.
1. Atomic Structures and Electronic Properties of Semiconductor Interfaces
2. Nano-scale view of atom intermixing at metal/semiconductor interfaces
3. Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing
4. Diffusion of Metals in Silicon Dioxide
5. Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric
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