Effect of electric field on formation energies of point defects around metal/SiC and metal/GaN interfaces: first-principles study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab3839/pdf
Reference31 articles.
1. 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
2. 1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal
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1. N‐Doped and P‐Doped Graphene on MgO (111): A First‐Principles Study;Advanced Engineering Materials;2021-11-19
2. Effect of electron transfer on metal-atom penetration into SiO2 in electric field: first-principles study;Japanese Journal of Applied Physics;2021-02-17
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