Improved performance of high indium InGaAs photodetectors with InAlAs barrier-Reference-Cited by-同舟云学术

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Improved performance of high indium InGaAs photodetectors with InAlAs barrier

Published:2018-04-25 Issue:6 Volume:57 Page:060302
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Du Ben,Gu Yi,Chen Xing-You,Ma Ying-Jie,Shi Yan-Hui,Zhang Jian,Zhang Yong-Gang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=6/a=060302/pdf

Reference24 articles.

1. In-flight proton-induced radiation damage to SCIAMACHY’s extended-wavelength InGaAs near-infrared detectors

2. Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors

3. Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures

4. Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

5. Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

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1. Wavelength extended InGaAsBi near infrared photodetector;J INFRARED MILLIM W;2023

2. Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors;Materials;2023-06-23

3. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface;ACS Applied Materials & Interfaces;2023-06-07

4. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications;Optics & Laser Technology;2022-04

5. High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector;Nanotechnology;2021-08-20

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