Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial-Reference-Cited by-同舟云学术

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Ultrashort intrinsic-like channel FETs with nanodot-type floating gate utilizing biomaterial

Published:2018-11-05 Issue:12 Volume:57 Page:125003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ban Takahiko,Migita Shinji,Uenuma Mutsunori,Okamoto Naofumi,Ishikawa Yasuaki,Uraoka Yukiharu,Yamashita Ichiro,Yamamoto Shin-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=12/a=125003/pdf

Reference34 articles.

1. Tin Oxide Thin Film Transistors

2. Biomedical Applications of Graphene and Graphene Oxide

3. A novel sub-20 nm depletion-mode double-gate (DMDG) FET

4. Patterning sub-50-nm Fin-FET using KrF lithography tool

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency Mixing with HfO2-Based Ferroelectric Transistors;ACS Applied Materials & Interfaces;2020-09-17

2. Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices;Journal of Materials Chemistry C;2020

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