Ester-free cross-linker molecules for ultraviolet-light-cured polysilsesquioxane gate dielectric layers of organic thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4/a=040313/pdf
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1. The path to ubiquitous and low-cost organic electronic appliances on plastic
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1. Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors;MRS Communications;2024-03-18
2. Solution-processed high-k photopatternable polymers for low-voltage electronics;Materials Horizons;2024
3. Polysilsesquioxane Gate Dielectric Layers Cured by UV Light Irradiation Using Thiol–Ene Reaction for Organic Thin‐Film Transistors;physica status solidi (a);2023-06
4. Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics;Journal of Materials Chemistry C;2022
5. Investigation of Photo-Initiators for Ultra-Violet Light Cured Polysilsesquioxane Gate Dielectric Layers of Organic Thin Film Transistors;Journal of the Society of Materials Science, Japan;2020-10-15
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