Lattice contraction with boron doping in fully strained SiGe epitaxial layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6/a=065504/pdf
Reference27 articles.
1. Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics
2. Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
3. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study
4. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
5. Densitometric and Electrical Investigation of Boron in Silicon
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