Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology-Reference-Cited by-同舟云学术

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Low Surface Traps Induced Noise ZrZnO Thin-Film Transistor Using Field-Plate Metal Technology

Published:2013-09-01 Issue:9R Volume:52 Page:094202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Hsien-Chin,Wang Hsiang-Chun,Luo Yi-Cheng,Huang Fan-Hsiu,Kao Hsuan-Ling,Hsueh Kuang-Po

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Low frequency noise analysis on organic thin film transistors

5. Crystal Quality Effect on Low-Frequency Noise in ZnO TFTs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors;Thin Solid Films;2016-12

2. Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain;Journal of Nanomaterials;2014

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