Gate Metal Dependent Reverse Leakage Mechanisms in AlGaN/GaN Schottky Diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
2. On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
3. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
4. Electron transport of inhomogeneous Schottky barriers
5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer;Advances in Condensed Matter Physics;2022-04-06
2. Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes;Journal of Physics D: Applied Physics;2016-07-11
3. Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode;Japanese Journal of Applied Physics;2014-12-04
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