Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment
2. Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry
3. Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures
4. GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
5. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy;Applied Physics Letters;2022-08-22
2. Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination;Journal of Applied Physics;2021-11-14
3. Morphological study of InGaN on GaN substrate by supersaturation;Journal of Crystal Growth;2019-02
4. Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy;physica status solidi (b);2017-06-14
5. Indium incorporation into InGaN: The role of the adlayer;Journal of Crystal Growth;2017-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3