Defect Termination of Flash-Lamp-Crystallized Large-Grain Polycrystalline Silicon Films by High-Pressure Water Vapor Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Improvement of n-Type Poly-Si Film Properties by Solid Phase Crystallization Method
2. Rapid crystallization of amorphous silicon utilizing a very-high-frequency microplasma jet for Si thin-film solar cells
3. Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates
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1. Photoluminescent Si/SiO2 Core/Shell Quantum Dots Prepared by High-Pressure Water Vapor Annealing for Solar Concentrators, Light-Emitting Devices, and Bioimaging;ACS Applied Nano Materials;2023-04-05
2. Semiconductor Applications;Flash Lamp Annealing;2019
3. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing;Japanese Journal of Applied Physics;2018-03-02
4. Improved quality of flash-lamp-crystallized polycrystalline silicon films by using low defect density Cat-CVD a-Si films;International Journal of Materials Research;2017-09-28
5. Doping by flash lamp annealing;Materials Science in Semiconductor Processing;2017-05
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