Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Development of High-Density Nitrogen Radical Source for Low Mosaicity and High Rate Growth of InGaN Films in Molecular Beam Epitaxy

Published:2013-02-01 Issue:2R Volume:52 Page:021001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shang,Kawai Yohjiro,Kondo Hiroki,Ishikawa Kenji,Takeda Keigo,Kano Hiroyuki,Sekine Makoto,Amano Hiroshi,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Ultraviolet and violet light‐emitting GaN diodes grown by low‐pressure metalorganic chemical vapor deposition

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. Nitride Semiconductors and Devices

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1. Perspectives on functional nitrogen science and plasma-based in situ functionalization;Japanese Journal of Applied Physics;2021-12-15

2. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology;physica status solidi (a);2020-11-12

3. Li-ion transport at the interface between a graphite anode and Li2CO3 solid electrolyte interphase: ab initio molecular dynamics study;Physical Chemistry Chemical Physics;2020

4. Towards quantifying the shear delamination of thin films;Materialia;2019-12

5. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

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