In situ X-ray Reflectivity Measurements on Annealed InxGa1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. GaN Growth Using GaN Buffer Layer
4. Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorption
5. In situ measurements of GaN nucleation layer decompostion
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1. InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method;Applied Surface Science;2017-11
2. Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing;Chinese Physics B;2017-10
3. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells;Journal of Physics D: Applied Physics;2016-11-11
4. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2014-12
5. In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy;Journal of Applied Physics;2014-03-07
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