Structural Dependence of Source-and-Drain Series Resistance on Saturation Drain Current for Sub-20 nm Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Structural Dependence of Source-and-Drain Series Resistance on Saturation Drain Current for Sub-20 nm Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2013-07-01 Issue:7R Volume:52 Page:071302
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoon JongChul,Hiroki Akira,Kobayashi Kazutoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Impact of the vertical SOI 'DELTA' structure on planar device technology

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

3. A comparative study of advanced MOSFET concepts

4. Beyond the conventional transistor

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