Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference25 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Fundamentals of Power Semiconductor Devices
3. Junction termination extension for near-ideal breakdown voltage in p-n junctions
4. Design of single and multiple zone junction termination extension structures for SiC power devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimal drift region for diamond power devices;Diamond and Related Materials;2016-10
2. Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics;IEEE Transactions on Electron Devices;2015-02
3. Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs;Materials Science Forum;2014-02
4. Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal Oxidation;Materials Science Forum;2014-02
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