Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2013-04-01 Issue:4S Volume:52 Page:04CC09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wei Kang Liang,Liu Xiao Yan,Du Gang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Where Do the Dopants Go?

2. Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

3. The effect of randomness in the distribution of impurity atoms on FET thresholds

4. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

5. Discrete random dopant distribution effects in nanometer-scale MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET;Japanese Journal of Applied Physics;2014-01-01

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