Lateral Two-Dimensional p–i–n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well-Reference-Cited by-同舟云学术

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Lateral Two-Dimensional p–i–n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well

Published:2013-01-01 Issue:1R Volume:52 Page:014001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Dai Van-Truong,Lin Sheng-Di,Lin Shih-Wei,Wu Jau-Yang,Li Liang-Chen,Lee Chien-Ping

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. High-frequency acousto-electric single-photon source

2. Surface-acoustic-wave-driven luminescence from a lateral p-n junction

3. Acoustoelectric luminescence from a field-effect n-i-p lateral junction

4. High-frequency performance of lateral p-n junction photodiodes

5. Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stable electroluminescence in ambipolar dopant-free lateral p–n junctions;Applied Physics Letters;2023-08-07

2. Formation of a lateral p–n junction light-emitting diode on an n-type high-mobility GaAs/Al_0.33Ga_0.67As heterostructure;Semiconductor Science and Technology;2023-04-18

3. Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs;Physical Review B;2022-02-07

4. Monolithic lateral p–n junction GaAs nanowire diodes via selective lateral epitaxy;Nanotechnology;2021-10-06

5. Non-adiabatic single-electron pumps in a dopant-free GaAs/AlGaAs 2DEG;Applied Physics Letters;2021-09-13

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