Formation of a lateral p–n junction light-emitting diode on an n-type high-mobility GaAs/Al0.33Ga0.67As heterostructure

Abstract

Abstract We have fabricated a device which includes two lateral p–n junctions on an n-type GaAs/Al0.33Ga0.67As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p–n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ∼ 8  nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources.