Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Effect of Chloride Precursors on the Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors

Published:2013-10-01 Issue:10S Volume:52 Page:10MA02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Dong Hee,Park Sung Min,Yang Jung Il,Cho Dong Kyu,Woo Sang Hyun,Lim Yoo Sung,Kim Dae Kuk,Yi Moonsuk

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference29 articles.

1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

2. Improved thin film transistor performance of solution-processed-zinc-oxide nanorods with spin-on-glass capping layer

3. Transparent thin-film transistors with zinc indium oxide channel layer

4. Amorphous IZO-based transparent thin film transistors

5. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A facile low-cost preparation of high-k ZrO2 dielectric films for superior thin-film transistors;Ceramics International;2019-12

2. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices;Advanced Materials;2018-06-27

3. Effect of Zinc Oxide Nanowires on the Electrical Performance of Indium Zinc Oxide Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2017-11-01

4. Effect of Al2O3 passivation layer on the stability of aluminum-indium-zinc oxide thin film transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-07

5. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance;Scientific Reports;2016-09

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