Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=12/a=125601/pdf
Reference23 articles.
1. Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
2. Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
3. Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN
4. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
5. Atomic structure of the (2×2) reconstructed GaAs(1¯1¯1¯) surface: A multivacancy model
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1. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO;Japanese Journal of Applied Physics;2020-07-17
2. Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition;Applied Physics Express;2020-05-20
3. Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies;physica status solidi (b);2020-04
4. Thermodynamic model for metalorganic vapor-phase epitaxy of N-polar group-III nitrides in step-flow growth mode: Hydrogen, competitive adsorption, and configuration entropy;Physical Review Materials;2019-10-31
5. Evolution of the free energy of the GaN(0001) surface based on first-principles phonon calculations;Physical Review B;2019-08-16
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