Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

Published:2017-02-27 Issue:3 Volume:10 Page:035501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hirama Kazuyuki,Taniyasu Yoshitaka,Karimoto Shin-ichi,Yamamoto Hideki,Kumakura Kazuhide

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=3/a=035501/pdf

Reference27 articles.

1. Ultraviolet luminescence spectra of boron nitride single crystals grown under high pressure and high temperature

2. Electrical behaviour and breakdown in plasma deposited cubic BN layers

3. Nonmetallic crystals with high thermal conductivity

4. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

5. Boron nitride substrates for high mobility chemical vapor deposited graphene

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1. Diamond/cubic boron nitride (111) heterojunction interface: Rational regulation of high two-dimonsional electron gas;Surfaces and Interfaces;2024-08

2. The Stability Prediction and Epitaxial Growth of Boron Nitride Nanodots on Different Substrates;Molecules;2024-03-15

3. SiC Material Properties;SiC Technology;2024

4. Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition;Physical Review Materials;2023-09-20

5. Interfacial charge transfer and electronic structure of diamond/c-BN heterointerface;Computational Materials Science;2023-02

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