444 nm InGaN light emitting diodes on low-defect-density $(11\bar{2}2)$ GaN templates on patterned sapphire-Reference-Cited by-同舟云学术

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444 nm InGaN light emitting diodes on low-defect-density $(11\bar{2}2)$ GaN templates on patterned sapphire

Published:2017-09-14 Issue:10 Volume:10 Page:106501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Khoury Michel,Li Hongjian,Kuritzky Leah Y.,Mughal Asad J.,DeMierry Philippe,Nakamura Shuji,Speck James S.,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/10/i=10/a=106501/pdf

Reference26 articles.

1. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells

2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

3. Strain-induced polarization in wurtzite III-nitride semipolar layers

4. High-quality nonpolarm-plane GaN substrates grown by HVPE

5. A GaN bulk crystal with improved structural quality grown by the ammonothermal method

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1. Light‐emitting Diodes and Lasers;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

2. Spatial distribution of optical intensity of overgrown semi-polar (20-21) InGaN/GaN multiple quantum wells dominated by surface morphology;AIP Advances;2023-06-01

3. Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon;Materials Today Communications;2022-06

4. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03

5. Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers;Applied Physics Reviews;2020-12

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