Temperature dependent transport properties and rectification in La0.7Sr0.3MnO3/La0.7Te0.3MnO3 p–n junctions-Reference-Cited by-同舟云学术

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Temperature dependent transport properties and rectification in La0.7Sr0.3MnO3/La0.7Te0.3MnO3 p–n junctions

Published:2019-04-17 Issue:5 Volume:12 Page:051013
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Liu Qi,Miao Jun^ORCID,Xu Zedong,Liu Pengfei,Meng Kangkang,Xu Xiaoguang,Wu Yong,Jiang Yong

Funder

the National Basic Research Program of China

the National Science Foundation of China

National Key R&D Program of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab129d/pdf

Reference41 articles.

1. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure

2. Logic Gates and Computation from Assembled Nanowire Building Blocks

3. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

4. Insulating-to-conducting behavior and band profile across the La0.9Ba0.1MnO3/Nb:SrTiO3 epitaxial interface

5. Rectifying characteristic in all-perovskite oxide film p-n junction with room temperature ferromagnetism

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of PN junctions of doped Mott insulators;AIP Advances;2021-12-01

2. Enhanced ferroelectric and photoelectric properties in lead-free Bi1.07FeO3-modified K0.5Na0.5NbO3 thin films;Journal of Materials Science: Materials in Electronics;2021-01

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